1. Crystallography and Product Fundamentals of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic substance composed of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its impressive polymorphism– over 250 recognized polytypes– all sharing strong directional covalent bonds yet differing in stacking series of Si-C bilayers.
The most technologically pertinent polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal kinds 4H-SiC and 6H-SiC, each displaying refined variations in bandgap, electron mobility, and thermal conductivity that affect their viability for specific applications.
The toughness of the Si– C bond, with a bond energy of roughly 318 kJ/mol, underpins SiC’s extraordinary firmness (Mohs firmness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical degradation and thermal shock.
In ceramic plates, the polytype is typically selected based upon the meant use: 6H-SiC is common in structural applications because of its ease of synthesis, while 4H-SiC controls in high-power electronic devices for its exceptional cost service provider mobility.
The broad bandgap (2.9– 3.3 eV depending upon polytype) additionally makes SiC an exceptional electrical insulator in its pure type, though it can be doped to operate as a semiconductor in specialized digital devices.
1.2 Microstructure and Stage Purity in Ceramic Plates
The performance of silicon carbide ceramic plates is seriously dependent on microstructural functions such as grain dimension, thickness, stage homogeneity, and the presence of second phases or impurities.
Premium plates are generally produced from submicron or nanoscale SiC powders via advanced sintering strategies, causing fine-grained, fully dense microstructures that make best use of mechanical toughness and thermal conductivity.
Contaminations such as cost-free carbon, silica (SiO ₂), or sintering help like boron or aluminum have to be thoroughly managed, as they can form intergranular films that reduce high-temperature stamina and oxidation resistance.
Residual porosity, also at reduced levels (
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