1. Product Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms set up in a tetrahedral lattice, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing phenomenal atomic bond stamina.
The Si– C bond, with a bond power of around 318 kJ/mol, is among the toughest in structural porcelains, conferring impressive thermal security, hardness, and resistance to chemical attack.
This robust covalent network causes a product with a melting point exceeding 2700 Ā° C(sublimes), making it among one of the most refractory non-oxide ceramics readily available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC keeps mechanical stamina and creep resistance at temperatures above 1400 Ā° C, where several steels and traditional ceramics begin to soften or weaken.
Its low coefficient of thermal growth (~ 4.0 Ć 10 ā»ā¶/ K) combined with high thermal conductivity (80– 120 W/(m Ā· K)) makes it possible for rapid thermal cycling without tragic breaking, a critical attribute for crucible performance.
These innate properties stem from the balanced electronegativity and similar atomic dimensions of silicon and carbon, which advertise a very steady and largely packed crystal structure.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are usually made from sintered or reaction-bonded SiC powders, with microstructure playing a decisive role in durability and thermal shock resistance.
Sintered SiC crucibles are generated with solid-state or liquid-phase sintering at temperatures above 2000 Ā° C, frequently with boron or carbon additives to improve densification and grain border cohesion.
This process generates a fully thick, fine-grained structure with minimal porosity (
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